Rethinking Power Electronics
In the global drive toward electrification, the technology that controls energy conversion is being pushed to its limits. From electric vehicles to satellite communications and renewable grids, every system depends on semiconductors that can handle more power, higher temperatures, and faster switching speeds. At the heart of this technological revolution stands Thompson Odion Igunma, a Nigerian engineer and materials science & engineering researcher at the University of Florida, whose work on gallium-nitride (GaN) high-electron-mobility transistors (HEMTs) is redefining the boundaries of high-power electronics. His paper, ‘Conceptualizing the Future of GaN HEMTs for High Power Applications,’ explores how next-generation GaN devices can bridge the gap between traditional silicon electronics and the high-voltage, high-efficiency systems that underpin the world’s energy transition.
“GaN isn’t just another material—it’s the key to smaller, faster, cooler electronics,” Igunma says. “If we design it right, we can enable everything from affordable EV chargers to lighter aerospace systems.”
Beyond Silicon
For decades, silicon dominated semiconductor design. But as power requirements and switching frequencies increase, silicon’s physical limits—heat tolerance, breakdown voltage, and efficiency—have become bottlenecks. GaN, a wide-bandgap semiconductor, offers a bandgap of 3.4 eV compared with silicon’s 1.1 eV, translating into superior thermal stability and higher breakdown voltages. In practical terms, GaN devices switch faster, handle higher voltages, and waste less energy as heat. These properties make them ideal for electric vehicles, radar systems, space electronics, and 5G infrastructure—industries where performance and efficiency are critical.
Igunma’s paper identifies the design bottlenecks that limit GaN’s industrial scalability: substrate defects, thermal management, and gate reliability. His conceptual framework proposes combining advanced epitaxy methods, 3-D device simulation, and AI-driven reliability prediction to accelerate the next generation of GaN HEMT design.
“Our goal,” he explains, “is not just to make GaN devices work, but to make them last longer, cost less, and perform better under extreme conditions.”
A Researcher Rooted in Precision
Thompson Igunma’s approach blends materials science & engineering ,circuit design, and machine learning. At the University of Florida’s Department of Materials Science & Engineering, he focuses on how GaN HEMT structures behave under high electric fields and temperature stress. He uses finite-element simulations to study electron mobility, current collapse, and thermal resistance—factors that determine whether a device can operate in defence radar systems or space satellites without failure.
“Our team is working toward a generation of devices that combine high voltage with long-term reliability,” Igunma notes. “That’s essential for electric grids and autonomous transportation systems.”
Inside the Paper: Conceptual Insights
The paper positions GaN HEMTs as central to the next phase of high-power electronics design. It outlines key areas of advancement:
• Thermal Management Breakthroughs – Integration of diamond and SiC substrates to reduce thermal resistance and prevent gate failure.
• AI-Assisted Device Design – Machine learning models for predicting lifetime degradation based on stress data and failure modes.
• Ultra-Wide Bandgap Alloys – Use of AlGaN and GaN-on-SiC architectures for superior field management.
• Packaging and Reliability Testing – Innovative 3-D packaging approaches to reduce parasitic inductance and improve heat dissipation.
“We don’t just want to make smaller transistors,” Igunma says. “We want to create a design ecosystem that anticipates failure before it happens. That’s where AI comes in.”
Aligning with the UK Semiconductor Strategy
The UK Government’s 2023 National Semiconductor Strategy committed £1 billion to strengthen domestic research and manufacturing capacity. A core pillar is wide-bandgap materials like GaN and SiC. Igunma’s research directly complements these priorities. His methods for AI-assisted reliability and thermal simulation mirror ongoing projects at the Compound Semiconductor Applications Catapult (CSAC) in Wales and the Centre for Power Electronics (CPE) at the University of Nottingham.
“The UK and Nigeria share similar goals in energy modernisation,” he observes. “Reliable power electronics are vital for renewables and transport. Collaboration can accelerate both regions toward clean-energy targets.”
From Nigeria to Florida: A Global Perspective
Born and educated in Nigeria, Thompson Igunma represents a generation of engineers linking African scientific potential with global innovation ecosystems. Before joining the University of Florida, he worked on microelectronics research focused on device modelling and failure analysis. His career path reflects a philosophy of using technology to solve real problems in emerging markets as well as industrialised economies.
“We can’t separate innovation from impact,” he says. “High-power electronics don’t just belong in laboratories—they belong in the energy systems that keep people alive and industries running.”
A New Era for High-Power Semiconductors
As global industries demand more efficient engineers like Thompson Odion Igunma are reshaping how power devices are conceived and constructed. His blend of scientific rigour, industrial insight, and global vision represents the future of materials engineering.
“We are designing for a world that runs on clean energy and smart systems,” he concludes. “Our work today determines how efficiently that future arrives.”
Reference: Igunma, T. O. et al. (2023). Conceptualizing the Future of GaN HEMTs for High Power Applications. University of Florida, Department of Materials Science & Engineering.
